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參數(shù)資料
| 型號： | 2SK2109-AZ |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 58K |
| 代理商： | 2SK2109-AZ |
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2109
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
PACKAGE DIMENSIONS (in mm)
1.5 ± 0.1
0.41
+0.03
–0.05
0.8
MIN. 0.42
±0.06
1.5
3.0
0.47
±0.06
0.42
±0.06
2.5
±
0.1
4.0
±
0.25
4.5 ± 0.1
1.6 ± 0.2
S
D
G
EQUIVALENT CIRCUIT
Source (S)
Internal diode
Gate protection
diode
Gate (G)
Drain (D)
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
Marking: NS
The 2SK2109 is a N-channel MOS FET of a vertical type and
is a switching element that can be directly driven by the output of
an IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuator, such as motors
and DC/DC converters.
FEATURES
Low ON resistance
RDS(on) = 1.0
MAX. @VGS = 4.0 V, ID = 0.3 A
High switching speed
ton + toff < 100 ns
Low parasitic capacitance
Document No. D11229EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
RATING
UNIT
Drain to Source Voltage
VDSS
VGS = 0
60
V
Gate to Source Voltage
VGSS
VDS = 0
±20
V
Drain Current (DC)
ID(DC)
±0.5
A
Drain Current (Pulse)
ID(pulse)
PW
≤ 10 ms,
±1.0
A
Duty cycle
≤ 50 %
Total Power Dissipation
PT
16 cm2
× 0.7 mm, ceramic substrate used
2.0
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
–55 to +150
C
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