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參數(shù)資料
| 型號： | 2SK2085TZ-E |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | SC-51, TO-92MOD, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 105K |
| 代理商： | 2SK2085TZ-E |
2SK2085
Rev.2.00 Sep. 07, 2005 page 3 of 6
Main Characteristics
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Drain
Current
I
D
(A)
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain Current ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State
Resistance vs. Drain Current
Case Temperature TC (°C)
Channel
Dissipation
Pch
(W)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
1.6
1.2
0.8
0.4
0
50
100
150
200
10
3
1
0.3
0.1
0.03
0.01
0.003
0.001
0.1
0.3
1
3
10
30
100 200
Operation in
this area is
limited by RDS(on)
1 ms
10
s
100
s
PW
=
10
ms
(1shot)
Ta = 25
°C
DC
Operation
5
4
3
2
1
0
24
6
8
10
10 V
8 V
6 V
5 V
4 V
Pulse Test
3 V
VGS = 2 V
2.5 V
3.5 V
5
4
3
2
1
01
2
3
4
5
VDS = 10 V
Pulse Test
Tc = 25
°C
–25
°C
75
°C
1.0
0.8
0.6
0.4
0.2
02
4
6
8
10
1 A
0.5 A
ID = 0.2 A
Pulse Test
0.1
2
1
0.1
0.2
0.5
0.2
0.5
1
2
5
10 V
VGS = 4 V
Pulse Test
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