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參數(shù)資料
| 型號(hào)： | 2SK2085TZ-E |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | SC-51, TO-92MOD, 3 PIN |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 76K |
| 代理商： | 2SK2085TZ-E |
2SK2085
Rev.2.00 Sep. 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
100
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
1.0
A
Drain peak current
ID(pulse)*
1
4.0
A
Body to drain diode reverse drain current
IDR
1.0
A
Channel dissipation
Pch*
2
0.9
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage
V(BR)DSS
100
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
100
A
VDS = 80 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.0
V
ID = 1 mA, VDS = 10 V
—
0.6
0.9
ID = 0.5 A, VGS = 10 V*
3
Static drain to source on state
resistance
RDS(on)
—
0.75
1.35
ID = 0.5 A, VGS = 4 V*
3
Forward transfer admittance
|yfs|
0.7
1.2
—
S
ID = 0.5 A, VDS = 10 V*
3
Input capacitance
Ciss
—
130
—
pF
Output capacitance
Coss
—
50
—
pF
Reverse transfer capacitance
Crss
—
12
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
7
—
ns
Rise time
tr
—
6.5
—
ns
Turn-off delay time
td(off)
—
55
—
ns
Fall time
tf
—
20
—
ns
ID = 0.5 A, VGS = 10 V,
RL = 60
Body to drain diode forward voltage
VDF
—
0.85
—
V
IF = 1.0 A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
80
—
ns
IF = 1.0 A, VGS = 0,
diF / dt = 50 A /
s
Note:
3. Pulse Test
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