參數(shù)資料
型號(hào): 2SK2084(L)
元件分類: JFETs
英文描述: 0.075 ohm, POWER, FET
封裝: DPAK-3
文件頁(yè)數(shù): 6/12頁(yè)
文件大?。?/td> 55K
代理商: 2SK2084(L)
2SK2084(L), 2SK2084(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
20
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
100
AV
DS = 16 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
2.5
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
0.04
0.053
I
D = 4 A
V
GS = 10 V*
1
0.058
0.075
I
D = 4 A
V
GS = 4 V*
1
Forward transfer admittance
|yfs|
5
9
S
I
D = 4 A
V
DS = 10 V*
1
Input capacitance
Ciss
800
pF
V
DS = 10 V
Output capacitance
Coss
680
pF
V
GS = 0
Reverse transfer capacitance
Crss
165
pF
f = 1 MHz
Turn-on delay time
t
d(on)
15
ns
I
D = 4 A
Rise time
t
r
60
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
100
ns
R
L = 5
Fall time
t
f
—80—ns
Body to drain diode forward
voltage
V
DF
0.9
V
I
F = 7 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
80
ns
I
F = 7 A, VGS = 0,
di
F / dt = 20 A / s
Note
1. Pulse Test
相關(guān)PDF資料
PDF描述
2SK2085TZ-E 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
2SK208GTE85R N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK2084L(E) 制造商:Renesas Electronics Corporation 功能描述:
2SK2084L-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET
2SK2084S 制造商:Hitachi 功能描述:
2SK2084STL-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET
2SK2085 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET