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參數(shù)資料
| 型號(hào)： | 2SK2059STL-E |
| 元件分類： | JFETs |
| 英文描述： | 3 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-63, DPAK-3 |
| 文件頁(yè)數(shù)： | 7/10頁(yè) |
| 文件大?。?/td> | 202K |
| 代理商： | 2SK2059STL-E |
2SK2059(L), 2SK2059(S)
Rev.2.00 Sep 07, 2005 page 4 of 7
Case Temperature TC (°C)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State
Resistance vs. Temperature
Drain Current ID (A)
Forward
Transfer
Admittance
y
fs
(S)
Forward Transfer Admittance
vs. Drain Current
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Body to Drain Diode Reverse
Recovery Time
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
Dynamic Input Characteristics
Gate
to
Source
Voltage
V
GS
(V)
Drain Current ID (A)
Switching
Time
t
(ns)
Switching Characteristics
10
40
160
8
2
0
80
120
0
4
6
–40
VGS = 10 V
Pulse Test
ID = 2 A
1 A
0.5 A
5
0.05
2
1
0.5
0.2
0.1
0.05
0.1
0.2
0.5
1
2
VDS = 20 V
Pulse Test
TC = 25 C
25 C
75 C
500
5
0.05
200
100
50
20
10
5
0.1
0.2
0.5
1
2
di/dt = 100 A/
s, V
GS = 0
Ta = 25
°C, Pulse Test
1,000
20
50
10
30
40
0
100
10
1
VGS = 0
f = 1 MHz
Crss
Coss
Ciss
500
820
400
100
412
16
0
200
300
20
16
4
0
8
12
VDD = 100 V
250 V
400 V
VGS
VDS
ID = 2 A
VDD = 400 V
250 V
100 V
500
5
0.05
200
100
50
20
10
5
0.1
0.5
1
0.2
2
VGS = 10 V, VDD
30 V
PW = 2
s, duty 1%
=
.
tf
td (on)
tr
td (off)
<
=
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