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參數(shù)資料
| 型號： | 2SK2059S |
| 元件分類： | JFETs |
| 英文描述： | 3 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 9/13頁 |
| 文件大?。?/td> | 72K |
| 代理商： | 2SK2059S |
2SK2059(L), 2SK2059(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
600
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±30
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±25 V, VDS = 0
Zero gate voltage drain current I
DSS
—
100
A
V
DS =500 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
3.8
5.0
I
D = 1A
V
GS = 10 V*
1
Forward transfer admittance
|y
fs|
1.2
2.0
—
S
I
D = 1A
V
DS = 10 V*
1
Input capacitance
Ciss
—
295
—
pF
V
DS = 10 V
Output capacitance
Coss
—
70
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
12
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—8
—ns
I
D = 1A
Rise time
t
r
—
25
—
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
—
65
—
ns
R
L = 30
Fall time
t
f
—30—ns
Body to drain diode forward
voltage
V
DF
—
0.9
—
V
I
F =3 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
220
—
ns
I
F = 3A, VGS = 0,
di
F / dt = 100 A / s
Note
1. Pulse Test
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