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參數資料
| 型號： | 2SK2008 |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3PFM, 3 PIN |
| 文件頁數： | 5/9頁 |
| 文件大小： | 50K |
| 代理商： | 2SK2008 |
2SK2008
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
250
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±30
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±25 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
A
V
DS =200 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
0.12
0.15
I
D = 10 A
V
GS = 10 V*
1
Forward transfer admittance
|y
fs|
9.0
14
—
S
I
D = 10 A
V
DS = 10 V*
1
Input capacitance
Ciss
—
2340
—
pF
V
DS = 10 V
Output capacitance
Coss
—
1000
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
160
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—
30
—
ns
I
D = 10 A
Rise time
t
r
—
125
—
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
—
190
—
ns
R
L = 3
Fall time
t
f
—
100
—
ns
Body to drain diode forward
voltage
V
DF
—
1.2
—
V
I
F = 20 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
120
—
ns
I
F = 20 A, VGS = 0,
di
F / dt = 100 A / s
Note
1. Pulse Test
See chracteristic curves of 2SK2007
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PDF描述 |
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| 2SK2011 | 12 A, 250 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220ML |
| 2SK2014 | 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK2008-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2009 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS) |
| 2SK2009(F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 30V 0.2A 3-Pin S-Mini Bulk |
| 2SK2009(TE85L) | 制造商:Toshiba America Electronic Components 功能描述:200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 2SK2009(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:Transistor,MOSFET |
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