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參數(shù)資料
| 型號： | 2SK1986 |
| 廠商： | FUJI ELECTRIC HOLDINGS CO., LTD. |
| 英文描述： | N-channel MOS-FET |
| 中文描述： | N溝道場效應(yīng)管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 214K |
| 代理商： | 2SK1986 |
N-channel MOS-FET
1000V
3,6
> Characteristics
2SK1986-01
FAP-IIA Series
4A
80W
Typical Output Characteristics
Drain-Source-On-State Resistance vs. T
ch
Typical Transfer Characteristics
↑
I
D
1
↑
R
D
]
2
↑
I
D
3
V
DS
[V]
→
T
ch
[°C]
→
V
GS
[V]
→
Typical Drain-Source-On-State-Resistance vs. I
D
Typical Forward Transconductance vs. I
D
Gate Threshold Voltage vs. T
ch
↑
R
D
]
4
↑
g
f
5
↑
V
G
6
I
D
[A]
→
I
D
[A]
→
T
ch
[°C]
→
Typical Capacitance vs. V
DS
Typical Input Charge
Forward Characteristics of Reverse Diode
↑
C
7
↑
V
D
8
↑
V
G
↑
I
F
9
V
DS
[V]
→
Q
g
[nC]
→
V
SD
[V]
→
Allowable Power Dissipation vs. T
C
Safe operation area
↑
Z
t
Transient Thermal impedance
11
↑
P
D
10
↑
I
D
12
T
c
[°C]
→
V
DS
[V]
→
t [s]
→
This specification is subject to change without notice!
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