參數(shù)資料
型號: 2SK1949S
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET(N溝道MOSFET)
中文描述: 硅N溝道場效應晶體管(不適用溝道MOSFET的)
文件頁數(shù): 6/9頁
文件大?。?/td> 64K
代理商: 2SK1949S
2SK1949(L), 2SK1949(S)
6
5
0.1
10
500
200
100
50
20
Reverse Drain Current I (A)
R
Body to Drain Diode Reverse
Recovery Time
0.2
0.5
1
2
5
10
di/dt = 50 A/
μ
s, Ta = 25
°
C
V = 0, Pulse Test
10
0
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
1000
200
500
100
20
50
10
20
30
40
50
Ciss
Coss
Crss
V = 0
f = 1 MHz
100
80
60
40
20
0
Gate Charge Qg (nc)
D
D
20
16
12
8
4
0
G
G
Dynamic Input Characteristics
4
8
12
16
20
V
GS
DS
V
V = 50 V
25 V
10 V
V = 10 V
25 V
50 V
I = 5 A
Drain Current I (A)
S
0.1
Switching Characteristics
500
200
100
20
10
5
50
0.2
0.5
1
2
5
10
V = 10 V, V = 30 V
PW = 5 μs, duty < 1 %
tf
r
d(on)
t
d(off)
t
相關(guān)PDF資料
PDF描述
2SK1950 Silicon N-Channel MOS FET(N溝道MOSFET)
2SK1950L Silicon N-Channel MOS FET(N溝道MOSFET)
2SK1950S Silicon N-Channel MOS FET(N溝道MOSFET)
2SK1951 Silicon N-Channel MOS FET(N溝道MOSFET)
2SK1952 Silicon N-Channel MOS FET(N溝道MOSFET)
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