參數(shù)資料
型號: 2SK1880S
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET(N溝道MOSFET)
中文描述: 硅N溝道場效應(yīng)晶體管(不適用溝道MOSFET的)
文件頁數(shù): 6/8頁
文件大?。?/td> 51K
代理商: 2SK1880S
2SK1880(L), 2SK1880(S)
6
Body to Drain Diode Reverse
Recovery Time
R
Reverse Drain Current I (A)
di/dt = 100 A/ s
V = 0
Ta = 25°C
Pulse Test
5000
0.1
0.2
0.5
1
2
5
10
r2000
1000
500
200
100
50
Typical Capacitance vs.
Drain to Source Voltage
C
1000
100
10
1
Ciss
Coss
Crss
V = 0
f = 1 MHz
0
10
20
30
40
50
Drain to Source Voltage V (V)
Dynamic Input Characteristics
1000
800
600
400
200
D
Gate Charge Qg (nc)
G
D
G
20
16
12
8
4
0
I = 1.5 A
V = 100 V
250 V
400 V
0
4
8
12
16
20
V = 100 V
250 V
400 V
V
GS
V
DS
Switching Characteristics
S
Drain Current I (A)
t (on)
t
t
t (off)
500
200
100
50
20
10
5
0.1 0.2
0.5
1
2
5
10
V = 10 V
PW = 2 s
duty 1%
V =
<
r
f
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