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參數(shù)資料
| 型號(hào)： | 2SK1860 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Silicon N-Channel Junction FET |
| 中文描述： | 0.6 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | MINIT3-F1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 77K |
| 代理商： | 2SK1860 |
Silicon Junction FETs (Small Signal)
2SK1860
Silicon N-Channel Junction FET
1
Publication date: August 2003
SJF00039AED
For impedance conversion in low frequency
For electret capacitor microphone
■
Features
High mutual conductance g
m
Low noise voltage of NV
■
Absolute Maximum Ratings
T
a
=
25
°
C
1: Drain
2: Source
3: Gate
Minit3-F1 Package
Unit: mm
–0.05
0.40
–0.01
0.12
2
±
0
1
±
0
2
±
0
0
±
0
5
±
0
2.9
±
0.2
1.9
±
0.1
(0.95)
(0.5)
(0.95)
2
3
1
10
5
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.* :
G
v ·
f
is assured for AQL0.065
%.
(the measurment method is used by source-grounded circuit.)
Parameter
Symbol
Rating
Unit
Drain-source voltage (Gate open)
V
DSO
20
20
V
Drain-gate voltage (Souse open)
V
DGO
I
DSO
V
Drain-source current (Gate open)
2
mA
Drain-gate current (Souse open)
I
DGO
2
mA
Gate-source cutoff current (Drain open)
I
GSO
P
D
2
mA
Power dissipation
200
mW
Operating ambient temperature
T
opr
20
to
+
80
55
to
+
150
°
C
°
C
Storage temperature
T
stg
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain current
I
D
I
DSS
V
DS
=
4.5
V, C
O
=
10 pF R
D
=
2.2 k
±
1%
V
DS
=
4.5 V, V
GS
=
0
100
600
μ
A
μ
A
Drain-sourse cutoff current
(G-S short)
95
480
Mutual conductance
g
m
NV
V
D
= 4.5 V, V
GS
= 0 f = 1 kHz
V
D
=
4.5 V, R
D
=
2.2 k
±
1%
C
O
=
10 pF, A-curve
V
D
=
4.5 V, R
D
=
2.2 k
±
1%
C
O
=
10 pF, e
G
=
10 mV f
=
1 kHz
V
D
=
12 V, R
D
=
2.2 k
±
1%
C
O
=
10 pF, e
G
=
10 mV f
=
1 kHz
V
D
=
1.5 V, R
D
=
2.2 k
±
1%
C
O
=
10 pF, e
G
=
10 mV f
=
1 kHz
V
D
=
4.5 V, R
D
=
2.2 k
±
1%
C
O
=
10 pF, e
G
=
10 mV f
=
1 kHz to 70 Hz
700
1
600
μ
S
μ
V
Noise voltage
4
Voltage gain
G
v1
3
2
dB
G
v2
0
3.3
dB
G
v3
4.5
0.3
dB
G
v ·
f
*
0
1.5
dB
Voltage gain difference
G
v2
G
v1
G
v1
G
v3
0
3.5
dB
0
3.5
dB
Marking Symbol: 1H
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