參數(shù)資料
型號: 2SK1824
廠商: NEC Corp.
英文描述: N-CHANNEL MOS FET FOR SWITCHING
中文描述: N溝道場效應(yīng)晶體管的開關(guān)
文件頁數(shù): 3/6頁
文件大?。?/td> 63K
代理商: 2SK1824
2SK1824
3
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
20
60
80
140
160
T
C
- Case Temperature - C
d
40
120
100
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
160
120
80
40
0
30
60
90
180
T
A
- Ambient Temperature - C
P
T
150
120
3.0 cm
2
×
0.64 mm
Using ceramic substrate
240
TRANSFER CHARACTERISTICS
100
10
1.0
0.1
0.01
0.001
0.5
1.0
1.5
2.0
2.5
V
GS
- Drain to Source Voltage - V
I
D
3.0
300
FORWARD TRANSFER ADMITTANCE
vs. DRAIN CURRENT
200
100
50
20
10
3.0
30
100
200
I
D
- Drain Current - mA
|
f
|
600
1.0
0.5
2
3.5
V
DS
= 3 V
Pulsed
2.5 C
T
A
= –25 C
7.5 C
150 C
10
5
V
DS
= 3 V
Pulsed
T
A
= 25 C–25 C
75 C
150 C
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
11
9
7
5
3
1
2
3
4
5
V
GS
- Gate to Source Voltage - V
R
D
7
13
8
6
0
I
D
= 0.1 A
Pulsed
I
D
= 10 mA
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
20
16
12
8
0
0.5
1
3
10
I
D
- Drain Current - mA
R
D
30
24
60
4
V
GS
= 2.5 V
Pulsed
T
A
= 150 C
75 C
25 C
–25 C
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