參數(shù)資料
型號(hào): 2SK1772
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET
中文描述: 硅N溝道場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 5/9頁(yè)
文件大?。?/td> 40K
代理商: 2SK1772
2SK1772
5
2.0
1.6
1.2
0.8
0.4
0
2
4
6
8
10
Gate to Source Voltage V (V)
V
D
Pulse test
I = 0.5 A
1 A
2 A
D
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
5
2
1
0.5
0.2
0.1
0.05
0.1
0.2
0.5
1
2
5
R
D
S
Pulse test
V = 4 V
10 V
Drain Current I (A)
Static Drain to Source on State
Resistance vs. Drain Current
2.0
1.6
1.2
0.8
0.4
–40
0
40
80
120
160
Case Temperature Tc (°C)
R
D
Pulse test
1 A
2 A
S
0
V = 10 V
V = 4 V
I = 0.5 A, 1 A
2 A
0.5 A
Static Drain to Source on State
Resistance vs. Temperature
5.0
2.0
1.0
0.5
0.2
0.1
0.05
F
f
0.02
0.05
Drain Current I (A)
0.1
0.2
0.5
1.0
2.0
75°C
–25°C
Tc = 25°C
V = 10 V
Pulse test
Forward Transfer Admittance vs.
Drain Current
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