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參數(shù)資料
| 型號(hào)： | 2SK1771 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | 2-3J1D, SMQ, 4 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 271K |
| 代理商： | 2SK1771 |
2SK1771
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
2SK1771
FM Tuner, VHF RF Amplifier Applications
Superior inter modulation performance.
Low noise figure: NF = 1.0dB (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
12.5
V
Gate-source voltage
VGS
±8
V
Drain current
ID
30
mA
Drain power dissipation
PD
150
mW
Channel temperature
Tch
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VDS = 0, VGS = ±6 V
±50
nA
Drain-source voltage
V (BR) DSX
VGS = 4 V, ID = 100 μA
12.5
V
Drain current
IDSS
VDS = 8 V, VGS = 0
0
0.1
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 8 V, ID = 100 μA
0.5
1.0
1.5
V
Forward transfer admittance
Yfs
VDS = 8 V, ID = 10 mA, f = 1 kHz
15
20
mS
Input capacitance
Ciss
2.9
3.5
4.1
pF
Reverse transfer capacitance
Crss
VDS = 8 V, ID = 10 mA, f = 1 MHz
0.3
0.8
pF
Power gain
Gps
18
23
28
dB
Noise figure
NF
VDS = 8 V, ID = 10 mA, f = 100 MHz
1.0
2.2
dB
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3J1D
Weight: 0.013 g (typ.)
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