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參數(shù)資料
| 型號： | 2SK1764 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅N溝道場效應晶體管（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 42K |
| 代理商： | 2SK1764 |
2SK1764
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
Pch*
60
V
Gate to source voltage
±
20
±
2
±
4
1
V
Drain current
A
Drain peak current
1
A
Channel power dissipation
2
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Notes 1. PW
≤
100
μ
s, duty cycle
≤
10 %
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
3. Marking is "KY".
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source cutoff voltage
V
GS(off)
I
DSS
I
GSS
R
DS(on)1
1
—
2
V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 50 V, V
GS
= 0
V
GS
=
±
15 V, V
DS
= 0
V
= 10 V
I
D
= 1 A*
V
= 4 V
I
D
= 1 A*
V
= 10 V
I
D
= 1 A*
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
Drain to source cutoff current
—
—
10
μ
A
μ
A
Gate to source cutoff current
—
—
±
5
0.45
Static drain to source on state
resistance
—
0.3
1
Static drain to source on state
resistance
R
DS(on)2
—
0.4
0.60
1
Forward transfer admittance
|y
fs
|
0.9
1.7
—
S
1
Input capacitance
Ciss
—
140
—
pF
Output capacitance
Coss
—
75
—
pF
Reverse transfer capacitance
Crss
—
20
—
pF
Turn on time
t
on
t
off
—
18
—
ns
V
DS
= 10 V, I
D
= 1 A*
R
L
= 30
1
Turn off time
Note
—
80
—
ns
1. Pulse Test
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1764KY(TR-E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK1764KYTL-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 2A 4-Pin(3+Tab) UPAK T/R |
| 2SK1764KYTR-E | 制造商:Renesas Electronics Corporation 功能描述:SILICON N CHANNEL MOS FET - Tape and Reel |
| 2SK1771(TE85L,F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 12.5V 0.03A 4-Pin SMQ T/R |
| 2SK1772-HY(TR-E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
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