參數(shù)資料
型號(hào)： 2SK1697
廠商： Hitachi,Ltd.
英文描述： Silicon N-Channel MOS FET
中文描述： 硅N溝道場效應(yīng)晶體管
文件頁數(shù)： 3/6頁
文件大?。?/td> 29K
代理商： 2SK1697
2SK1697
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±
10
μ
A
μ
A
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 50 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 0.3 A, V
GS
= 10 V *
1
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
50
V
GS(off)
R
DS(on)
1.0
—
2.0
V
Static drain to source on state
resistance
—
1.3
1.7
—
1.8
2.5
I
D
= 0.3 A, V
GS
= 4 V *
1
I
D
= 0.3 A, V
DS
= 10 V *
1
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
Forward transfer admittance
|y
fs
|
Ciss
0.25
0.38
—
S
Input capacitance
—
30
—
pF
Output capacitance
Coss
—
13
—
pF
Reverse transfer capacitance
Crss
—
4
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
3
—
ns
I
D
= 0.3 A, V
GS
= 10 V,
R
L
= 100
Rise time
—
8
—
ns
Turn-off delay time
—
18
—
ns
Fall time
—
14
—
ns
Body to drain diode forward
voltage
—
1
—
V
I
F
= 0.5 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse test
t
rr
—
45
—
ns
I
F
= 0.5 A, V
GS
= 0,
di
F
/dt = 50 A/
μ
s
See characteristic curve of 2SK1336.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK1697EYTL-E 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 250V 30A 3PIN TO-3P - Tape and Reel 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 0.5A 4-Pin(3+Tab) UPAK T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,0.5A,1.3ohm,UPAK 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 0.5A 4-Pin(3+Tab) UPAK T/R
2SK170 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SK170BL 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR OR B1CAC
2SK170BL(F) 制造商:Toshiba America Electronic Components 功能描述:TRANS JFET N-CH 12MA 3PIN TO-92 - Bulk
2SK170-BL(F) 制造商:Toshiba 功能描述:Nch -40V 6mA to 14mA TO92 Bulk
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