參數(shù)資料
型號: 2SK1478
廠商: PANASONIC CORP
元件分類: JFETs
英文描述: Silicon N-Channel Power F-MOS FET
中文描述: 8 A, 250 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
封裝: TO-220, FULL PACK-3
文件頁數(shù): 1/2頁
文件大?。?/td> 35K
代理商: 2SK1478
1
Power F-MOS FETs
2SK1478
Silicon N-Channel Power F-MOS FET
unit: mm
I
Features
G
Low ON-resistance R
DS(on)
: R
DS(on)
= 0.4
(typ.)
G
High-speed switching: t
f
= 44ns (typ.)
G
No secondary breakdown
G
High breakdown voltage, large allowable power dissipation
I
Applications
G
Contactless relay
G
Diving circuit for a solenoid
G
Driving circuit for a motor
G
Control equipment
G
Switching power supply
I
Absolute Maximum Ratings
(T
C
= 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
T
C
= 25°C
Ta = 25°C
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
T
ch
T
stg
Ratings
250
±20
±8
±16
40
2
150
55 to +150
Unit
V
V
A
A
W
°C
°C
I
Electrical Characteristics
(T
C
= 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Fall time
Turn-off time (delay time)
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
C
iss
C
oss
C
rss
t
on
t
f
t
d(off)
Conditions
V
DS
= 200V, V
GS
= 0
V
GS
= ±20V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 25V, I
D
= 1mA
V
GS
= 10V, I
D
= 5A
V
DS
= 25V, I
D
= 5A
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
GS
= 10V, I
D
= 5A
V
DD
= 100V, R
L
= 20
min
250
1
2.7
typ
0.4
4.7
1100
200
60
72
44
136
max
0.1
±1
5
0.6
Unit
mA
μ
A
V
V
S
pF
pF
pF
ns
ns
ns
1: Gate
2: Drain
3: Source
EIAJ: SC-67
TO-220 Full Pack Package (a)
10.0±0.2
5.5±0.2
7
1
0
1
S
4
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.25
5.08±0.5
2
1
3
2.7±0.2
4.2±0.2
4
φ
3.1±0.1
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