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參數(shù)資料
| 型號： | 2SK1403A-E |
| 元件分類： | JFETs |
| 英文描述： | 8 A, 650 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-65, TO-3P, 3 PIN |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 98K |
| 代理商： | 2SK1403A-E |
2SK1403A
Rev.3.00 May 15, 2006 page 4 of 6
5
40
160
Case Temperature TC (°C)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
4
1
0
80
120
0
2
3
Static Drain to Source on State
Resistance vs. Temperature
–40
VGS = 10 V
Pulse Test
ID = 10 A
5 A
2 A
500
0.2
5
Reverse Drain Current IDR (A)
200
10
0.5
2
0.1
50
100
5
1
Reverse
Recovery
Time
t
rr
(ns)
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/
s, V
GS = 0
Ta = 25
°C
20
10
1,000
20
50
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
10
30
40
Typical Capacitance vs.
Drain to Source Voltage
0
100
VGS = 0
f = 1 MHz
Crss
Coss
Ciss
5,000
5
10
1,000
40
100
Drain
to
Source
Voltage
V
DS
(V)
Dynamic Input Characteristics
800
200
20
60
80
400
600
20
16
4
0
8
12
Gate
to
Source
Voltage
V
GS
(V)
0
250 V
400 V
VDD = 100 V
VGS
VDS
VDD = 400 V
250 V
100 V
ID = 8 A
Gate Charge Qg (nc)
500
Drain Current ID (A)
Switching
Time
t
(ns)
200
5
50
100
10
Switching Characteristics
td (off)
0.5
1
0.2
2
20
tf
tr
td (on)
20
510
VGS = 10 V, VDD = 30 V
PW = 2
s, duty ≤ 1 %
50
0.2
5
Drain Current ID (A)
10
1
0.5
2
5
2
0.1
1
Forward
Transfer
Admittance
y
fs
(S)
Forward Transfer Admittance vs.
Drain Current
20
10
0.5
25°C
75°C
VDS = 20 V
Pulse Test
Tc = –25°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1404 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 600V 5A 3PIN TO-220FM - Rail/Tube 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1404(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1404-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1405 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1405-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
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