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參數(shù)資料
| 型號(hào)： | 2SK1402-E |
| 元件分類： | JFETs |
| 英文描述： | 4 A, 600 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | SC-46, 3 PIN |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 82K |
| 代理商： | 2SK1402-E |
2SK1402, 2SK1402A
Rev.2.00 Sep 07, 2005 page 4 of 6
10
40
160
Case Temperature TC (°C)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
8
2
0
80
120
0
4
6
Static Drain to Source on State
Resistance vs. Temperature
–40
VGS = 10 V
Pulse Test
ID = 5 A
2 A
1 A
10
0.1
2
Drain Current ID (A)
2
0.2
1
0.5
0.05
0.5
Forward
Transfer
Admittance
y
fs
(S)
Forward Transfer Admittance
vs. Drain Current
5
VDS = 20 V
Pulse Test
75
°C
TC = –25°C
5
25
°C
0.1
1,000
0.1
2
Reverse Drain Current IDR (A)
500
20
0.2
1
0.05
100
200
10
0.5
Reverse
Recovery
Time
t
rr
(ns)
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/
s, V
GS = 0
Ta = 25
°C
50
5
100
20
50
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
10
30
40
Typical Capacitance vs.
Drain to Source Voltage
0
10
VGS = 0
f = 1 MHz
Crss
Coss
Ciss
1,000
0
1,000
16
40
Drain
to
Source
Voltage
V
DS
(V)
Dynamic Input Characteristics
800
200
824
32
0
400
600
20
16
4
0
8
12
Gate
to
Source
Voltage
V
GS
(V)
0
250 V
400 V
VDD = 100 V
VGS
VDS
VDD = 400 V
250 V
100 V
ID = 4 A
Gate Charge Qg (nc)
500
Reverse Drain Current ID (A)
Switching
Time
t
(ns)
200
5
50
100
0.1
10
Switching Characteristics
td (off)
0.5
1
0.2
2
10
tf
tr
td (on)
20
VGS = 10 V, PW = 2 s
duty
1%, VDD 30 V
5
<
=
.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1403 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 600V 8A 3PIN TO-P - Rail/Tube |
| 2SK1403A | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1403A-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1404 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 600V 5A 3PIN TO-220FM - Rail/Tube 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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