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參數(shù)資料
| 型號： | 2SK1401A |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET |
| 中文描述： | 硅N溝道場效應晶體管 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 49K |
| 代理商： | 2SK1401A |
2SK1401, 2SK1401A
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
K1401
V
(BR)DSS
300
—
—
V
I
D
= 10 mA, V
GS
= 0
breakdown voltage
K1401A
350
—
—
Gate to source breakdown
voltage
V
(BR)GSS
±
30
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
I
DSS
—
—
±
10
μ
A
μ
A
V
GS
=
±
25 V, V
DS
= 0
V
DS
= 240 V, V
GS
= 0
V
DS
= 280 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 8 A, V
GS
= 10 V *
1
Zero gate voltage
K1401
—
—
250
drain current
K1401A
Gate to source cutoff voltage
V
GS(off)
R
DS(on)
2.0
—
3.0
V
Static drain to source K1401
—
0.25
0.35
on state resistance
K1401A
—
0.30
0.40
Forward transfer admittance
|yfs|
6
9.5
—
S
I
D
= 8 A, V
DS
= 10 V *
1
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
Input capacitance
Ciss
—
1250
—
pF
Output capacitance
Coss
—
420
—
pF
Reverse transfer capacitance
Crss
—
70
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
15
—
ns
I
D
= 8 A, V
GS
= 10 V,
R
L
= 3.75
Rise time
—
80
—
ns
Turn-off delay time
—
100
—
ns
Fall time
—
55
—
ns
Body to drain diode forward
voltage
—
1.05
—
V
I
F
= 15 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note:
1. Pulse test
t
rr
—
370
—
ns
I
F
= 15 A, V
= 0,
di
F
/dt = 100 A/
μ
s
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK1402A | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 2SK1402 | Silicon N-Channel MOS FET |
| 2SK1423 | Very High-Speed Switching Applications |
| 2SK1424 | Very High-Speed Switching Applications |
| 2SK1425 | Very High-Speed Switching Applications |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1401A(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1402 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1402A | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1402A(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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