參數(shù)資料
型號(hào): 2SK1400A
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET(N溝道MOSFET)
中文描述: 硅N溝道場(chǎng)效應(yīng)晶體管(不適用溝道MOSFET的)
文件頁數(shù): 3/7頁
文件大?。?/td> 53K
代理商: 2SK1400A
2SK1400, 2SK1400A
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
K1400
V
(BR)DSS
300
V
I
D
= 10 mA, V
GS
= 0
breakdown voltage
K1400A
350
Gate to source breakdown
voltage
V
(BR)GSS
±
30
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
I
DSS
±
10
250
μ
A
μ
A
V
GS
=
±
25 V, V
DS
= 0
V
DS
= 240 V, V
GS
= 0
V
DS
= 280 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 4 A, V
GS
= 10 V *
Zero gate voltage
K1400
drain current
K1400A
Gate to source cutoff voltage
V
GS(off)
R
DS(on)
2.0
3.0
V
Static drain to source K1400
0.50
0.70
1
on state resistance
K1400A
0.60
0.80
Forward transfer admittance
|yfs|
3.0
5.0
S
I
D
= 4 A, V
DS
= 10 V *
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
1
Input capacitance
Ciss
635
pF
Output capacitance
Coss
230
pF
Reverse transfer capacitance
Crss
40
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
10
ns
I
D
= 4 A, V
GS
= 10 V,
R
L
= 7.5
Rise time
50
ns
Turn-off delay time
60
ns
Fall time
40
ns
Body to drain diode forward
voltage
1.0
V
I
F
= 7 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse test
t
rr
240
ns
I
F
= 7 A, V
= 0,
di
F
/dt = 100 A/
μ
s
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