參數(shù)資料
型號: 2SK1340
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET
中文描述: 硅N溝道場效應(yīng)晶體管
文件頁數(shù): 6/9頁
文件大小: 48K
代理商: 2SK1340
2SK1340
6
5,000
0.5
10
Reverse Drain Current I
DR
(A)
R
r
2,000
200
0.2
1
5
50
500
1,000
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/
μ
s, Ta = 25°C
V
GS
= 0
Pulse Test
0.1
100
2
10,000
20
50
Drain to Source Voltage V
DS
(V)
C
1,000
100
10
30
40
10
Typical Capacitance vs.
Drain to Source Voltage
0
Crss
Coss
Ciss
V
= 0
f = 1 MHz
1,000
40
100
Gate Charge Qg (nc)
D
D
Dynamic Input Characteristics
800
200
20
60
80
0
400
600
V
DS
400 V
16
4
0
8
12
V
DD
= 250 V
400 V
600 V
I
D
= 5 A
600 V
V
DD
= 250 V
V
GS
G
G
20
500
0.5
10
Drain Current I
D
(A)
S 200
0.2
1
5
5
50
100
0.1
10
2
Switching Characteristics
t
f
t
d (on)
t
r
V
= 10 V V
= 30 V
PW = 2
μ
s, duty < 1%
t
d (off)
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