- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370103 > 2SK1338 (Hitachi,Ltd.) Silicon N-Channel MOS FET(N溝道MOSFET) PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK1338 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅N溝道場(chǎng)效應(yīng)晶體管（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 56K |
| 代理商： | 2SK1338 |
2SK1338
2
Absolute Maximum Ratings
(Ta = 25
q
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
I
DR
Pch*
900
V
Gate to source voltage
r
30
V
Drain current
2
A
Drain peak current
1
6
A
Body to drain diode reverse drain current
2
A
Channel dissipation
2
50
W
Channel temperature
Tch
150
q
C
Storage temperature
Notes 1. PW
d
10
P
s, duty cycle
d
1%
2. Value at T
C
= 25
q
C
Tstg
–55 to +150
q
C
Electrical Characteristics
(Ta = 25
q
C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
900
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
r
30
—
—
V
I
G
=
r
100
P
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
r
10
P
A
V
GS
=
r
25 V, V
DS
= 0
V
DS
= 720 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 1 A, V
GS
= 10 V *
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
250
P
A
V
GS(off)
R
DS(on)
2.0
—
3.0
V
Static drain to source on state
resistance
—
5.0
7.0
:
1
Forward transfer admittance
|yfs|
0.9
1.5
—
S
I
D
= 1 A, V
DS
= 20 V *
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
1
Input capacitance
Ciss
—
425
—
pF
Output capacitance
Coss
—
175
—
pF
Reverse transfer capacitance
Crss
—
85
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
10
—
ns
I
D
= 1 A, V
GS
= 10 V,
R
L
= 30
:
Rise time
—
35
—
ns
Turn-off delay time
—
60
—
ns
Fall time
—
50
—
ns
Body to drain diode forward
voltage
—
0.9
—
V
I
F
= 2 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse test
t
rr
—
700
—
ns
I
F
= 2 A, V
= 0,
di
F
/dt = 100 A/
P
s
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1339 | Silicon N-Channel MOS FET |
| 2SK1340 | Silicon N-Channel MOS FET |
| 2SK1341 | Silicon N-Channel MOS FET |
| 2SK1342 | Silicon N-Channel MOS FET |
| 2SK1399 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1338(E) | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 900V 2A 3-Pin(3+Tab) TO-220AB |
| 2SK1338-E | 制造商:Renesas Electronics Corporation 功能描述:2SK1338-E - Rail/Tube 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 900V 2A 3-Pin(3+Tab) TO-220AB Tray 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,900V,2A,5.0ohm,TO-220AB |
| 2SK1339 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 900V 3A 3PIN TO-P - Rail/Tube |
| 2SK1339(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK1339-E | 制造商:Renesas Electronics Corporation 功能描述:3A, 900V, TO-3P, PB FREE - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 900V 3A TO-3P |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。