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參數(shù)資料
| 型號： | 2SK1335(L) |
| 元件分類： | JFETs |
| 英文描述： | 0.8 ohm, POWER, FET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 55K |
| 代理商： | 2SK1335(L) |
2SK1335(L), 2SK1335(S)
4
5
820
Gate to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
4
1
412
16
0
2
3
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
ID = 5 A
Pulse Test
2 A
1 A
5
120
Drain Current ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
2
0.1
0.5
2
10
0.2
0.5
1.0
Static Drain to Source on State
Resistance vs. Drain Current
0.2
0.05
5
15 V
VGS = 10 V
Pulse Test
2.0
40
160
Case Temperature TC (°C)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
1.6
0.4
0
80
120
0
0.8
1.2
Static Drain to Source on State
Resistance vs. Temperature
ID = 5 A
VGS = 10 V
Pulse Test
–40
1 A
2 A
10
0.2
5
Drain Current ID (A)
Forward
Transfer
Admittance
yfs
(S)
5
0.5
0.1
0.5
2
0.1
1
2
Forward Transfer Admittance
vs. Drain Current
Tc = 25°C
VDS = 10 V
Pulse Test
0.05
0.2
1
–25°C
75°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1336-E | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 2SK1338-E | 2 A, 900 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1340-E | 5 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 |
| 2SK1341-E | 6 A, 900 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1401-E | 15 A, 300 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1335S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1336 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1336 | 制造商:Renesas Electronics Corporation 功能描述:MOSFET N LOGIC TO-92 |
| 2SK1336-E | 制造商:Renesas Electronics Corporation 功能描述:MOSFET N LOGIC TO-92 |
| 2SK1336TL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR MOSFET TO 92 E LINE TO 237 |
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