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參數資料
| 型號： | 2SK1334 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅N溝道場效應晶體管（不適用溝道MOSFET的） |
| 文件頁數： | 3/7頁 |
| 文件大?。?/td> | 46K |
| 代理商： | 2SK1334 |
2SK1334
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
200
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±
10
μ
A
μ
A
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 160 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 0.5 A, V
GS
= 10 V *
1
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
50
V
GS(off)
R
DS(on)
2.0
—
4.0
V
Static drain to source on state
resistance
—
2.5
3.8
—
4.5
7.0
I
D
= 2 A, V
GS
= 10 V *
1
I
D
= 0.5 A, V
DS
= 10 V *
1
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
Forward transfer admittance
|yfs|
0.4
0.6
—
S
Input capacitance
Ciss
—
80
—
pF
Output capacitance
Coss
—
40
—
pF
Reverse transfer capacitance
Crss
—
7
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
5
—
ns
I
D
= 0.5 A, V
GS
= 10 V,
R
L
= 60
Rise time
—
8
—
ns
Turn-off delay time
—
10
—
ns
Fall time
—
7
—
ns
Body to drain diode forward
voltage
—
1.0
—
V
I
F
= 1 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse test
2. Marking for 2SK1334 is “BY”.
t
rr
—
75
—
ns
I
F
= 1 A, V
= 0,
di
F
/dt = 50 A/
μ
s
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| 2SK1335 | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 2SK1335L | Silicon N-Channel MOS FET(N溝道MOSFET) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK1334-BY(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1334BYTL-E | 制造商:Renesas Electronics Corporation 功能描述:N CHANNEL MOSFET 200V 1A UPAK 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 200V 1A 4-Pin(3+Tab) SOT-89 T/R |
| 2SK1335 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1335L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
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