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參數(shù)資料
| 型號： | 2SK1297 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅N溝道場效應晶體管（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 52K |
| 代理商： | 2SK1297 |
2SK1297
3
Electrical Characteristics
(Ta = 25
q
C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
r
20
—
—
V
I
G
=
r
100
P
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
r
10
P
A
V
GS
=
r
16 V, V
DS
= 0
V
DS
= 50 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 20 A, V
GS
= 10 V *
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
250
P
A
V
GS(off)
R
DS(on)
1.0
—
2.0
V
Static drain to source on state
resistance
—
0.015
0.018
:
1
—
0.02
0.025
:
I
D
= 20 A, V
GS
= 4 V *
I
D
= 20 A, V
DS
= 10 V *
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
1
Forward transfer admittance
|yfs|
22
35
—
S
1
Input capacitance
Ciss
—
3600
—
pF
Output capacitance
Coss
—
1850
—
pF
Reverse transfer capacitance
Crss
—
450
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
30
—
ns
I
D
= 20 A, V
GS
= 10 V,
R
L
= 1.5
:
Rise time
—
170
—
ns
Turn-off delay time
—
700
—
ns
Fall time
—
350
—
ns
Body to drain diode forward
voltage
—
1.2
—
V
I
F
= 40 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse test
t
rr
—
155
—
ns
I
F
= 40 A, V
GS
= 0,
di
F
/dt = 50 A/
P
s
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