參數(shù)資料
型號(hào): 2SK112
英文描述: Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
中文描述: 晶體管|場(chǎng)效應(yīng)| N溝道| 1.2MA我(直)|到18
文件頁數(shù): 1/9頁
文件大?。?/td> 47K
代理商: 2SK112
2SK1167, 2SK1168
Silicon N-Channel MOS FET
ADE-208-1253 (Z)
1st. Edition
Mar. 2001
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
1
2
3
TO-3P
1. Gate
2. Drain
(Flange)
3. Source
D
G
S
相關(guān)PDF資料
PDF描述
2SK1131 TRANSISTOR | MOSFET | N-CHANNEL | 1MA I(D) | TO-92VAR
2SK1135 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SK113O TRANSISTOR | JFET | N-CHANNEL | 25MA I(DSS) | TO-18
2SK113R Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SK113Y TRANSISTOR | JFET | N-CHANNEL | 50MA I(DSS) | TO-18
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