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參數(shù)資料
| 型號： | 2SK1109 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM |
| 中文描述： | N溝道硅片結(jié)型場效應(yīng)晶體管的阻抗流腦轉(zhuǎn)爐 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 2SK1109 |
Data Sheet D15940EJ1V0DS
3
2SK1109
TYPICAL CHARACTERISTICS (T
A
= 25°C)
20
40
60
80
100
120 140
160
0
40
20
80
60
100
DERATING FACTOR OF
POWER DISSIPATION
T
A
- Ambient Temperature - C
d
V
GS
- Gate to Source Voltage - V
I
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
40
μ
0
10
20
30
30
40
20
10
0.2
0.4
0.6
0.8
1.0
1.0
0.8
0.6
0.4
0.2
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
I
D
0.6
0.4
0.2
0
+0.2
0.2
0.6
0.4
0.8
1.0
V
DS
= 5 V
I
D
S
S
0
0
I
D
S
S
0
0
A
μ
I
D
S
S
0
0
A
A
INPUT CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10
20
50
100
V
DS
- Drain to Source Voltage - V
C
i
10
20
50
100
1
2
5
1
5
2
V
= 0 V
f = 1.0 MHz
GATE TO SOURCE CUT-OFF VOLTAGE AND FORWARD
TRANSFER ADMITTANCE vs. ZERO-GATE VOLTAGE
DRAIN CURRENT CO-RELATION
10.0
Zero-Gate Voltage Drain Current - A
G
|
f
|
V
DS
= 5 V
1.0
0.5
0.2
0.1
0.05
0.02
0.01
20
50
100
200
500
1000
5.0
2.0
10
V
GS (off)
|y
fs
|
μ
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1109(A) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1112 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-251VAR |
| 2SK1113 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:2SK1113 |
| 2SK1117 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SK1117 |
| 2SK1118 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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