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參數(shù)資料
| 型號： | 2SK1093 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅N溝道場效應晶體管（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 30K |
| 代理商： | 2SK1093 |
2SK1093
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±
10
250
μ
A
μ
A
V
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 50 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 5 A, V
GS
= 10 V *
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
V
GS(off)
R
DS(on)
1.0
—
2.0
Static drain to source on state
resistance
—
0.12
0.15
1
0.17
0.22
S
I
D
= 5 A, V
GS
= 4 V *
I
D
= 5 A, V
DS
= 10 V *
V
= 10 V, V
GS
= 0,
f = 1 MHz
1
Forward transfer admittance
|yfs|
3.5
6.0
—
1
Input capacitance
Ciss
—
400
—
pF
Output capacitance
Coss
—
220
—
pF
Reverse transfer capacitance
Crss
—
60
—
pF
Turn-on delay time
t
d(on)
—
5
—
ns
I
D
= 5 A, V
GS
= 10 V,
R
L
= 6
Rise time
t
r
t
d(off)
t
f
V
DF
—
55
—
ns
Turn-off delay time
—
140
—
ns
Fall time
—
90
—
ns
Body to drain diode forward
voltage
—
1.2
—
V
I
F
= 10 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse test
t
rr
—
125
—
ns
I
F
= 10 A, V
GS
= 0,
di
F
/dt = 50 A/
μ
s
See characteristic curves of 2SK970.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1094 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1094(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1095 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1096 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1096M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MOSFETs |
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