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參數(shù)資料
| 型號： | 2SK1088-M |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; No. of Contacts:2; Connector Shell Size:11; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight |
| 中文描述： | 9 A, 150 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220F15, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 184K |
| 代理商： | 2SK1088-M |
2SK1088-M
F-III Series
N-channel MOS-FET
0,3
150V
9A
35W
> Features
-
High Current
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
High Forward Transconductance
> Outline Drawing
> Applications
-
Motor Control
-
General Purpose Power Amplifier
-
DC-DC converters
> Maximum Ratings and Characteristics
-
Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Continous Reverse Drain Current
Gate-Source-Voltage
Max. Power Dissipation
Operating and Storage Temperature Range
> Equivalent Circuit
Symbol
V
DS
I
D
I
D(puls)
I
DR
V
GS
P
D
T
ch
T
stg
Rating
Unit
V
A
A
A
V
W
°C
°C
150
9
36
9
±20
35
150
-55 ~ +150
-
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
Test conditions
I
D
=1mA
I
D
=1mA
V
DS
=150V
V
GS
=0V
V
GS
=±20V
I
D
=4,5A
I
D
=4,5A
I
D
=4,5A
Min.
150
1,0
Typ.
Max.
Unit
V
V
μA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
V
ns
V
GS
=0V
V
DS=
V
GS
T
ch
=25°C
T
ch
=125°C
V
DS
=0V
V
GS
=4V
V
GS
=10V
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=30V
I
D
=9A
V
GS
=10V
R
GS
=25
1,5
10
0,2
10
0,26
0,20
10
900
150
40
10
40
150
30
1,1
100
2,5
500
1,0
100
0,40
0,30
Gate Source Leakage Current
Drain Source On-State Resistance
I
GSS
R
DS(on)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr
5
1200
230
60
15
60
230
45
1,5
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Diode Forward On-Voltage
Reverse Recovery Time
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-dI
F
/dt=100A/μs T
ch
=25°C
-
Item
Thermal Resistance
Thermal Characteristics
Symbol
R
th(ch-a)
R
th(ch-c)
Test conditions
channel to air
channel to case
Min.
Typ.
Max.
62,5
3,57
Unit
°C/W
°C/W
FUJI ELECTRIC GmbH; Lyoner Strae 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56
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