參數(shù)資料
型號(hào): 2SK1083
廠商: FUJI ELECTRIC HOLDINGS CO., LTD.
英文描述: N-channel MOS-FET
中文描述: N溝道場(chǎng)效應(yīng)管
文件頁數(shù): 1/2頁
文件大小: 186K
代理商: 2SK1083
2SK1083-MR
N-channel MOS-FET
F-III Series
60V
0,22
8A
20W
> Features
-
High Current
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
High Forward Transconductance
> Outline Drawing
> Applications
-
Motor Control
-
General Purpose Power Amplifier
-
DC-DC converters
> Maximum Ratings and Characteristics
-
Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Continous Reverse Drain Current
Gate-Source-Voltage
Max. Power Dissipation
Operating and Storage Temperature Range
> Equivalent Circuit
Symbol
V
DS
I
D
I
D(puls)
I
DR
V
GS
P
D
T
ch
T
stg
Rating
Unit
V
A
A
A
V
W
°C
°C
60
8
32
8
±20
20
150
-55 ~ +150
-
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
Test conditions
I
D
=1mA
I
D
=1mA
V
DS
=60V
V
GS
=0V
V
GS
=±20V
I
D
=4A
I
D
=4A
I
D
=4A
Min.
Typ.
Max.
Unit
V
V
μA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
V
ns
V
GS
=0V
V
DS=
V
GS
T
ch
=25°C
T
ch
=125°C
V
DS
=0V
V
GS
=4V
V
GS
=10V
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=30V
I
D
=8A
V
GS
=10V
R
GS
=25
60
1,0
1,5
10
0,2
10
0,22
0,15
2,5
500
1,0
100
0,35
0,22
Gate Source Leakage Current
Drain Source On-State Resistance
I
GSS
R
DS(on)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr
3
6
300
110
40
450
170
60
10
45
75
30
1,8
7
30
50
20
1,2
50
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Diode Forward On-Voltage
Reverse Recovery Time
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-dI
F
/dt=100A/μs T
ch
=25°C
-
Item
Thermal Resistance
Thermal Characteristics
Symbol
R
th(ch-a)
R
th(ch-c)
Test conditions
channel to air
channel to case
Min.
Typ.
Max.
62,5
6,25
Unit
°C/W
°C/W
FUJI ELECTRIC GmbH; Lyoner Strae 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56
相關(guān)PDF資料
PDF描述
2SK1083-MR TV 6C 6#8(TWINAX) PIN PLUG
2SK1085-M N-channel MOS-FET
2SK1086 N-CHANNEL SILICON POWER MOSFET
2SK1086-MR N-CHANNEL SILICON POWER MOSFET
2SK1087 N-CHANNEL SILICON POWER MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK1083M 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 8A I(D) | TO-220AB
2SK1083MR 制造商:未知廠家 制造商全稱:未知廠家 功能描述:LOGIC LEVEL MOSFET
2SK1083-MR 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:N-channel MOS-FET
2SK1084 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MOSFETs
2SK1085 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 3A I(D) | TO-220AB