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參數(shù)資料
| 型號： | 2SK0374P |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236 |
| 封裝： | MINI3-G1, SC-59, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 196K |
| 代理商： | 2SK0374P |
249
Silicon Junction FETs (Small Signal)
unit: mm
2SK0374 (2SK374)
Silicon N-Channel Junction FET
For low-frequency amplification
For switching
I Features
G Low noise-figure (NF)
G High gate to drain voltage V
GDO
G Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
VDSX
VGDO
VGSO
ID
IG
PD
Tch
Tstg
Ratings
55
30
10
200
150
55 to +150
Unit
V
mA
mW
°C
I Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Mutual conductance
Input capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Noise figure
Symbol
IDSS*
IGSS
VGDC
VGSC
gm
Ciss
Crss
NF
Conditions
VDS = 10V, VGS = 0
VGS =
30V, V
DS = 0
IG =
100A, V
DS = 0
VDS = 10V, ID = 10A
VDS = 10V, ID = 5mA, f = 1kHz
VDS = 10V, VGS = 0, f = 1MHz
VDS = 10V, VGS = 0, Rg = 100k
f = 100Hz
min
1
55
2.5
max
20
10
5
Unit
mA
nA
V
mS
pF
dB
typ
80
7.5
6.5
1.9
2.5
1: Source
JEDEC: TO-236
2: Drain
EIAJ: SC-59
3: Gate
Mini3-G1 Package
Marking Symbol (Example): 2B
* IDSS rank classification
Runk
IDSS (mA)
Marking Symbol
P
1 to 3
2BP
Q
2 to 6.5
2BQ
R
5 to 12
2BR
S
10 to 20
2BS
Note) The part number in the parenthesis shows conventional part number.
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –
0.05
2.8
+0.2 –
0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±0.2
5°
10
°
0
to
0.1
1.1
+0.2 –
0.1
1.1
+0.3 –
0.1
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
latest
information.
http://panasonic.net/sc/en
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK0601 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK0601(2SK601) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:小信號デバイス － 小信號FET － MOS FET |
| 2SK060100L | 功能描述:MOSFET N-CH 80V 500MA MINI-PWR RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK0601G0L | 功能描述:MOSFET N-CH 80V .5A MINIP-3 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK0614 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For switching |
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