參數(shù)資料
型號(hào): 2SK0065P
英文描述: Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
中文描述: 晶體管|場(chǎng)效應(yīng)| N溝道| 12V的五(巴西)直| 40uA的我(直)| SPAKVAR
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 194K
代理商: 2SK0065P
241
FET (
)
unit: mm
2SK0065
(2SK65)
N
I
G
G
·
1: Drain
2: Gate
3: Source
NS-B1 Package
I
(Ta = 25°C)
·
·
·
·
·
V
DSO
V
GDO
I
DSO
I
DGO
I
GSO
P
D
T
opr
T
stg
12
12
2
2
2
20
10 ~ +70
20 ~ +150
V
V
mA
mA
mA
mW
°C
°C
I
(Ta = 25°C)
·
I
DSS*
g
m
NV
G
V1*
G
V2*
G
V3*
V
DS
= 4.5V, V
GS
= 0, R
S
= 2.2k
± 1%
V
DS
= 4.5V, V
GS
= 0
R
S
= 2.2k
± 1%, f = 1kHz
V
DS
= 4.5V, R
S
= 2.2k
± 1%
C
G
= 10pF, A-curve
V
DS
= 4.5V, R
S
= 2.2k
± 1%
C
G
= 10pF, e
G
= 100mV, f = 70Hz
V
DS
= 12V, R
S
= 2.2k
± 1%
C
G
= 10pF, e
G
= 100mV, f = 70Hz
V
DS
= 1V, R
S
= 2.2k
± 1%
C
G
= 10pF, e
G
= 100mV, f = 70Hz
0.04
300
0.8
4
mA
μ
S
μ
V
dB
dB
dB
*
I
DSS
G
V
500
10
9.5
11
I
DSS
(mA)
G
V1
(dB)
G
V2
(dB)
| G
V1
G
V2
| (dB)
P
0.04 ~ 0.2
>
13
>
12
< 3
Q
0.15 ~ 0.8
>
12
>
11
< 3
) ( )
,
4.0
±0.2
0.75 max.
2.0
±0.2
0.45
(2.5) (2.5)
0.7
±0.1
2
3
1
+0.10
0.45
0.10
7
3
±
(
(
1
±
相關(guān)PDF資料
PDF描述
2SK0065Q TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR
2SK0123(2SK123) Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated &#181;P Reset
2SK0198(2SK198) 2SK0198 (2SK198) - N-Channel Junction FET
2SK032
2SK0374(2SK374) Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated &#181;P Reset
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK0065Q 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR
2SK0123 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For Impedance Conversion In Low Frequency
2SK0123(2SK123) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Small-signal device - Small-signal FETs - Junction FETs
2SK0198 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For Low-Frequency Amplification
2SK0198(2SK198) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SK0198 (2SK198) - N-Channel Junction FET