參數(shù)資料
型號(hào): 2SJ667
廠商: SANYO SEMICONDUCTOR CO LTD
元件分類: JFETs
英文描述: 42 A, 100 V, 0.074 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: TO-3PB, 3 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 39K
代理商: 2SJ667
2SJ667
No.8248-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Input Capacitance
Ciss
VDS=--20V, f=1MHz
6350
pF
Output Capacitance
Coss
VDS=--20V, f=1MHz
430
pF
Reverse Transfer Capacitance
Crss
VDS=--20V, f=1MHz
250
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
47
ns
Rise Time
tr
See specified Test Circuit.
360
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
480
ns
Fall Time
tf
See specified Test Circuit.
220
ns
Total Gate Charge
Qg
VDS=--50V, VGS=--10V, ID=--42A
110
nC
Gate-to-Source Charge
Qgs
VDS=--50V, VGS=--10V, ID=--42A
20
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--50V, VGS=--10V, ID=--42A
20
nC
Diode Forward Voltage
VSD
IS=--42A, VGS=0
--1.05
--1.2
V
Package Dimensions
unit : mm
2056A
Switching Time Test Circuit
Avalanche Resistance Test Circuit
1 : Gate
2 : Drain
3 : Source
SANYO : TO-3PB
15.6
2.6
3.5
1.2
14.0
1.6
1.0
2.0
0.6
20.0
15.0
1.3
3.2
4.8
2.0
0.6
5.45
1.4
1
2
3
PW=10
s
D.C.
≤1%
P.G
50
G
S
D
ID= --21A
RL=2.38
VDD= --50V
VOUT
2SJ667
VIN
0V
--10V
VIN
50
0V
--10V
≥50
RG
VDD
L
2SJ667
相關(guān)PDF資料
PDF描述
2SJ74 P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2SJ74-BL P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2SJ76-E 0.5 A, 140 V, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK1033 20 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F
2SK1053 1 A, 450 V, 4.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ668 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon P-Channel MOS Type Relay Drive, DC/DC Converter and Motor Drive Applications
2SJ668(Q) 制造商:Toshiba 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin (2+Tab) PW-Mold Cut Tape
2SJ668(TE16L,NQ) 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-Channel 60V 5A Logic PW-Mold
2SJ668(TE16L1,NQ) 功能描述:MOSFET MOSFET P-Ch 60V 5A Rdson=0.17Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SJ668(TE16L1NQ) 制造商:Toshiba America Electronic Components 功能描述:MOSFET P CH 5A 60V DPAK