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參數(shù)資料
| 型號： | 2SJ606 |
| 元件分類： | JFETs |
| 英文描述： | 83 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | MP-25, 3 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 208K |
| 代理商： | 2SJ606 |
Data Sheet D14654EJ3V0DS
2
2SJ606
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS =
60 V, VGS = 0 V
10
A
Gate Leakage Current
IGSS
VGS =
m 20 V, VDS = 0 V
m 10
A
Gate Cut-off Voltage
VGS(off)
VDS =
10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| yfs |VDS =
10 V, ID = 42 A
38
74
S
Drain to Source On-state Resistance
RDS(on)1
VGS =
10 V, ID = 42 A
12
15
m
RDS(on)2
VGS =
4.0 V, ID = 42 A
16
23
m
Input Capacitance
Ciss
VDS =
10 V
4800
pF
Output Capacitance
Coss
VGS = 0 V
1200
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
340
pF
Turn-on Delay Time
td(on)
VDD =
30 V, ID = 42 A
13
ns
Rise Time
tr
VGS =
10 V
13
ns
Turn-off Delay Time
td(off)
RG = 0
290
ns
Fall Time
tf
160
ns
Total Gate Charge
QG
VDD=
48 V
120
nC
Gate to Source Charge
QGS
VGS =
10 V
20
nC
Gate to Drain Charge
QGD
ID =
83 A
30
nC
Body Diode Forward Voltage
VF(S-D)
IF = 83 A, VGS = 0 V
1.1
V
Reverse Recovery Time
trr
IF = 83 A, VGS = 0 V
60
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s
120
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
PG.
L
VDD
VGS =
20 → 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS (
)
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
VDS
Wave Form
VGS (
)
10%
90%
10%
0
VDS (
)
90%
td(on)
tr
td(off)
tf
10%
τ
VDS
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG =
2 mA
VGS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ606-Z | 83 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ606-ZJ-AZ | 83 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SJ606-S | 83 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SJ607-S-AZ | 83 A, 60 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SJ607-Z | 83 A, 60 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ606-AZ | 制造商:Renesas Electronics 功能描述:Pch -60V -83A 15m@10V TO220AB 制造商:Renesas Electronics 功能描述:Pch -60V -83A 15m@10V TO220AB Cut Tape 制造商:Renesas Electronics 功能描述:Pch -60V -83A 15m@10V TO220AB Bulk 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,83A,12m ohm,TO-220AB 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 83A 3-Pin(3+Tab) TO-220AB |
| 2SJ606-S | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ606-Z | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ606-Z(AZ) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SJ606-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
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