參數(shù)資料
型號： 2SJ606-Z
元件分類： JFETs
英文描述： 83 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： MP-25Z, TO-220SMD, 3 PIN
文件頁數(shù)： 5/6頁
文件大?。?/td> 208K
代理商： 2SJ606-Z
Data Sheet D14654EJ3V0DS
3
2SJ606
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Tch - Channel Temperature - C
dT
-
Percentage
of
Rated
Power
-
%
040
20
60
100
140
80
120
160
100
80
60
40
20
0
TC - Case Temperature - C
P
T
-
Total
Power
Dissipation
-
W
0
80
20
40
60
100
140
120
160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
140
120
100
80
60
40
20
0
FORWARD BIAS SAFE OPERATING AREA
ID
-
Drain
Current
-
A
VDS - Drain to Source Voltage - V
10
100
1000
0.1
1
10
TC = 25C
Single Pulse
1
100
Power
Dissipation
Limited
R
DS(on)
Limited
ID(DC)
ID(pulse) PW
=
10
s
100
s
1 ms
10
ms
DC
PW - Pulse Width - s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t)
-
Transient
Thermal
Resistance
-
C
/W
10
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1000
Single Pulse
10
100
Rth(ch-C) = 1.04C/W
Rth(ch-A) = 83.3C/W
相關(guān)PDF資料
PDF描述
2SJ606-ZJ-AZ 83 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
2SJ606-S 83 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA
2SJ607-S-AZ 83 A, 60 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA
2SJ607-Z 83 A, 60 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ607-ZJ-AZ 83 A, 60 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ606-Z(AZ) 制造商:Renesas Electronics 功能描述:Cut Tape
2SJ606-ZJ 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR
2SJ607 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor
2SJ607-AZ 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 83A 3-Pin(3+Tab) TO-220 Cut Tape 制造商:Renesas Electronics 功能描述:Pch -60V -83A 11m@10V TO220AB Bulk 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,83A,9.1m ohm,TO-220AB 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 83A 3-Pin(3+Tab) TO-220 Isolated
2SJ607-S 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR
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