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參數(shù)資料
| 型號(hào)： | 2SJ606-Z-AZ |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 83 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MP-25Z, TO-220SMD, 3 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 78K |
| 代理商： | 2SJ606-Z-AZ |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SJ606
SWITCHING
P-CHANNEL POWER MOS FET
DATA SHEET
Document No.
D14654EJ3V0DS00 (3rd edition)
Date Published
July 2002 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
2000, 2001
DESCRIPTION
The 2SJ606 is P-channel MOS Field Effect Transistor designed
for high current switching applications.
FEATURES
Super low on-state resistance:
RDS(on)1 = 15 m
MAX. (VGS = 10 V, ID = 42 A)
RDS(on)2 = 23 m
MAX. (VGS = 4.0 V, ID = 42 A)
Low input capacitance:
Ciss = 4800 pF TYP. (VDS =
10 V, VGS = 0 V)
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m 20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
m 83
A
Drain Current (pulse)
Note1
ID(pulse)
m 300
A
Total Power Dissipation (TC = 25°C)
PT
120
W
Total Power Dissipation (TA = 25°C)
PT
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
40
A
Single Avalanche Energy
Note2
EAS
160
mJ
Notes 1. PW
≤ 10
s, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD =
30 V, RG = 25 , VGS = 20 → 0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ606
TO-220AB
2SJ606-S
TO-262
2SJ606-ZJ
TO-263
2SJ606-Z
TO-220SMD
Note
Note TO-220SMD package is produced only in
Japan
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ610(2-7J1B) | 2 A, 250 V, 2.55 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ613 | 6 A, 20 V, 0.069 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ615 | 2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ615 | 2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ621 | 3500 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ606-ZJ | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ607 | 制造商:KEXIN 制造商全稱(chēng):Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SJ607-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 83A 3-Pin(3+Tab) TO-220 Cut Tape 制造商:Renesas Electronics 功能描述:Pch -60V -83A 11m@10V TO220AB Bulk 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,83A,9.1m ohm,TO-220AB 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 83A 3-Pin(3+Tab) TO-220 Isolated |
| 2SJ607-S | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ607-Z | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
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