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參數(shù)資料
| 型號： | 2SJ605-S |
| 廠商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | MOS場效應(yīng)管 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 84K |
| 代理商： | 2SJ605-S |
2000
MOS FIELD EFFECT TRANSISTOR
2SJ605
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No. D14650EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark
!
shows major revised points.
DESCRIPTION
The 2SJ605 is P-channel MOS Field Effect Transistor designed
for high current switching applications.
FEATURES
Super low on-state resistance:
R
DS(on)1
= 20 m
MAX. (V
GS
= –10
V, I
D
= –33
A)
R
DS(on)2
= 31 m
MAX. (V
GS
= –4.0
V, I
D
= –33 A)
Low input capacitance
C
iss
= 4600 pF TYP. (V
DS
= –10
V, V
GS
= 0 A)
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
I
AS
E
AS
–60
V
V
A
A
W
W
°C
°C
A
mJ
m
20
m
65
m
200
100
1.5
150
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation
(T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
–55 to +150
–45
203
Notes 1.
PW
≤
10
μ
s, Duty cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= –30 V, R
G
= 25
, V
GS
= –20
→
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ605
TO-220AB
2SJ605-S
TO-262
2SJ605-ZJ
TO-263
2SJ605-Z
TO-220SMD
Note
Note
TO-220SMD package is produced only
in Japan.
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)
!
!
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ605-Z | MOS FIELD EFFECT TRANSISTOR |
| 2SJ605-ZJ | MOS FIELD EFFECT TRANSISTOR |
| 2SJ606 | Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0712-0 00; No. of Positions: 32; Connector Type: Panel; Contact Gender: Male; Contact Spacing (mm): 2; Terminal Pitch (mm): 2; Current Rating(Amps)(Max.): 2; Contact Mating Area Plating: Tin; Operating Temperature Range (degrees C): -30 to 85; General Description: In-line adapter; Both ends male contacts; Pin contact |
| 2SJ606-S | Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0633-6 00; No. of Positions: 32; Connector Type: Panel; Contact Gender: Male; Contact Spacing (mm): 2; Terminal Pitch (mm): 2; Current Rating(Amps)(Max.): 2; Operating Temperature Range (degrees C): -30 to 85; General Description: In-line plug; Male contact; Pin contact termination |
| 2SJ606-Z | MOS FIELD EFFECT TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ605-Z | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ605-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 65A 3-Pin(2+Tab) TO-220 SMD |
| 2SJ605-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ605-ZJ-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ606 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
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