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參數(shù)資料
| 型號： | 2SJ601-Z |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 中文描述： | 開關P溝道功率MOS FET工業(yè)用 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 54K |
| 代理商： | 2SJ601-Z |
Preliminary Data Sheet D14646EJ1V0DS
2
2SJ601
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –60
V, V
GS
= 0
V
–10
μ
A
Gate Leakage Current
I
GSS
V
GS
=
m
20
V, V
DS
= 0
V
V
DS
= –10
V, I
D
= –1
mA
m
10
2.5
μ
A
Gate Cut-off Voltage
V
GS(off)
1.5
2.0
V
Forward Transfer Admittance
| y
fs
|
V
DS
= –10
V, I
D
= –18
A
15
30
S
R
DS(on)1
V
GS
= –10
V, I
D
= –18
A
25
31
m
Drain to Source On-state Resistance
R
DS(on)2
V
GS
= –4.0
V, I
D
= –18
A
32
46
m
Input Capacitance
C
iss
V
DS
= –10
V
3300
pF
Output Capacitance
C
oss
V
GS
= 0
V
580
pF
Reverse Transfer Capacitance
C
rss
f = 1
MHz
230
pF
Turn-on Delay Time
t
d(on)
V
DD
= –30
V, I
D
= –18
A
11
ns
Rise Time
t
r
V
GS(on)
= –10
V
12
ns
Turn-off Delay Time
t
d(off)
R
G
= 0
80
ns
Fall Time
t
f
53
ns
Total Gate Charge
Q
G
V
DD
= –48
V
63
nC
Gate to Source Charge
Q
GS
V
GS
= –10
V
10
nC
Gate to Drain Charge
Q
GD
I
D
= –36
A
16
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= –36
A, V
GS
= 0
V
1.0
V
Reverse Recovery Time
t
rr
I
F
= –36
A, V
GS
= 0
V
52
ns
Reverse Recovery Charge
Q
rr
di/dt = –100
A
/
μ
s
108
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG
L
V
DD
V
GS
= –20 V
→
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
(
)
D.U.T.
R
L
V
DD
τ
= 1
s
Duty Cycle
≤
1%
μ
V
GS
Wave Form
V
DS
Wave Form
V
GS
(
)
10%
90%
V
GS
(on)
10%
0
V
DS
(
)
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
V
DS
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
=
2 mA
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相關代理商/技術參數(shù) |
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|---|---|
| 2SJ601-Z-AZ | 制造商:Renesas Electronics 功能描述:Pch -60V -36A 31m@10V TO252 制造商:Renesas Electronics 功能描述:Pch -60V -36A 31m@10V TO252 Bulk |
| 2SJ601-Z-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ601-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ601-Z-E2 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ602 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
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