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參數(shù)資料
| 型號(hào)： | 2SJ600 |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 25000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 封裝： | TO-251, MP-3, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 114K |
| 代理商： | 2SJ600 |
2SJ439
2006-11-16
1
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (πMOSV)
2SJ439
DC/DC Converter, Relay Drive and Motor Drive
Applications
2.5-V gate drive
Low drainsource ON-resistance
: RDS (ON) = 0.18 (typ.)
High forward transfer admittance
: |Yfs| = 6.0 S (typ.)
Low leakage current
: IDSS = 100 A (max) (VDS = 16 V)
Enhancement mode
: Vth = 0.5~1.1 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drainsource voltage
VDSS
16
V
Draingate voltage (RGS = 20 k)
VDGR
16
V
Gatesource voltage
VGSS
±8
V
DC
(Note 1)
ID
5
Drain current
Pulse(Note 1)
IDP
20
A
Drain power dissipation (Tc = 25°C)
PD
20
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
6.25
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
125
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ600-Z | 25000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SJ601-AZ | 36000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 2SJ601-Z-AZ | 36000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SJ602-Z | 20 A, 60 V, 0.107 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ602-Z-AZ | 20 A, 60 V, 0.107 ohm, P-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ600-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,25A,41m ohm,TO-251 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 25A 3-Pin(3+Tab) TO-251 |
| 2SJ600-Z | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SJ600-Z-AZ | 制造商:Renesas Electronics 功能描述:Pch -60V -25A 50m@10V TO252 Bulk |
| 2SJ600-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ601 | 制造商:Renesas Electronics Corporation 功能描述: |
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