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參數(shù)資料
| 型號： | 2SJ599-Z |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 20000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 封裝： | TO-252, MP-3Z, 3 PIN |
| 文件頁數(shù)： | 10/10頁 |
| 文件大?。?/td> | 237K |
| 代理商： | 2SJ599-Z |
Data Sheet D14644EJ4V0DS
7
2SJ599
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
2) TO-252 (MP-3Z)
1. Gate
2. Drain
3. Source
4. Fin (Drain)
2
13
6.5 ±0.2
5.0 ±0.2
4
1.5
0.1
+0.2
5.5
±0.2
7.0
MIN.
13.7
MIN.
2.3
0.75
0.5 ±0.1
2.3 ±0.2
1.6
±0.2
1.1 ±0.2
0.5 0.1
+0.2
0.5 0.1
+0.2
12 3
4
6.5 ±0.2
4.4 ±0.2
5.0 ±0.2
0.5 ±0.1
5.6
±0.3
9.5
±0.5
2.5
±0.5
1.0
±0.5
1.5
0.1
+0.2
2.3 ±0.2
0.5 ±0.1
Note
0.4
MIN.
0.5
TYP.
0.15 ±0.15
2.3 ±0.3
5.5
±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Note The depth of notch at the top of the fin is
from 0 to 0.2 mm.
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| 2SJ599 | 20000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
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| 2SJ603-Z | 25 A, 60 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET |
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| 2SJ603-S | 25 A, 60 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ599-Z-AZ | 制造商:Renesas Electronics 功能描述:Pch -60V -20A 75m@10V TO252 Bulk |
| 2SJ599-Z-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ599-Z-E1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ599-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ599-Z-E2 | 制造商:Renesas Electronics Corporation 功能描述: |
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