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參數(shù)資料
| 型號： | 2SJ588 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET High Speed Switching |
| 中文描述： | 硅P通道MOS FET的高速開關(guān) |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 26K |
| 代理商： | 2SJ588 |
2SJ588
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
-30
V
Gate to source voltage
±
20
V
Drain current
-100
mA
Drain peak current
Note1
-400
mA
Body-drain diode reverse drain current
-100
mA
Channel dissipation
300
mW
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
≤
10
μ
s, duty cycle
≤
1%
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
-30
—
—
V
I
D
= -100
μ
A, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
I
DSS
—
—
±
5
μ
A
μ
A
V
GS
=
±
16 V, V
DS
= 0
V
DS
= -30 V, V
GS
= 0
Zero gate voltege drain
current
—
—
-1
Gate to source cutoff voltage
V
GS(off)
-1.3
—
-2.3
V
I
D
= -10
μ
A, V
DS
= -5 V
Static drain to source on state R
DS(on)
resistance
—
2.8
3.3
I
D
= -50 mA,V
GS
= -10 V
Note 2
R
DS(on)
|y
fs
|
Ciss
—
5.7
7.9
I
D
= -50 mA,V
GS
= -4 V
Note 2
Forward transfer admittance
68
105
—
mS
I
D
= -50 mA, V
DS
= -10 V
Note 2
V
DS
= -10 V
V
GS
= 0
f = 1 MHz
Input capacitance
—
25
—
pF
Output capacitance
Coss
—
20
—
pF
Reverse transfer capacitance Crss
—
8
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
—
10
—
ns
I
D
= -50 mA, V
GS
= -10 V
R
L
= 200
Rise time
—
15
—
ns
Turn-off delay time
—
40
—
ns
Fall time
Note:
—
45
—
ns
2. Pulse test
See characteristics curves of 2SJ575
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| 2SJ590LS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:DC / DC Converter Applications |
| 2SJ591 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:DC / DC Converter Applications |
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