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參數(shù)資料
| 型號： | 2SJ574 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel Power MOS FET(P溝道功率MOSFET) |
| 中文描述： | 硅P通道功率MOS FET性（P溝道功率MOSFET的） |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 103K |
| 代理商： | 2SJ574 |
2SJ574
3
Main Characteristics
-0.1
Drain to Source Voltage V (V)
-1.0
-10
-50
800
600
400
200
0
50
100
150
200
-5
-1.0
-0.5
-0.1
-0.05
-0.01
-0.005
-0.001
-0.0005
10 μs
100 μs
1 ms
PW=10ms
Maximum Safe Operation Area
-1.0
-0.8
-0.6
-0.4
-0.2
0
-2
-4-
-6
-8
-10
-7 V
V = -3V
Pulse Test
-6 V
-5 V
-4 V
D
D
Typical Output Characteristics
Drain to Source Voltage V (V)
Operation in this area
is limited by RDS(on)
C
Ambient Temperature Ta ( °C)
Power vs. Temperature Derating
-1.0
-0.8
-0.6
-0.4
-0.2
0
-2
-4
-6
-8
-10
Tc = –25 °C
75 °C
V = -10 V
Pulse Test
25 °C
Gate to Source Voltage V (V)
Typical Transfer Characteristics
D
D
D
D
*Value on the alumina ceramic board.(12.5x20x0.7mm)
-0.002
-0.02
-0.2
-2
-0.05
-0.2 -0.5
-2
-5
-20
Ta=25 °C
Value on the alumina ceramic board.(12.5x20x0.7mm)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ575 | Silicon P Channel MOS FET(P溝道MOSFET) |
| 2SJ576 | Silicon P Channel MOS FET(P溝道MOSFET) |
| 2SJ580 | Ultrahigh-Speed Switching Applications |
| 2SJ583 | Ultrahigh-Speed Switching Applications |
| 2SJ583LS | Ultrahigh-Speed Switching Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ574_11 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET High Speed Switching |
| 2SJ575 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Switching |
| 2SJ576 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET High Speed Switching |
| 2SJ577 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ578 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
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