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參數(shù)資料
| 型號： | 2SJ567(2-7B1B) |
| 元件分類： | JFETs |
| 英文描述： | 2.5 A, 200 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2-7B1B, SC-64, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 361K |
| 代理商： | 2SJ567(2-7B1B) |
2SJ567
2002-08-12
2
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
A
Drain cut-off current
IDSS
VDS = 200 V, VGS = 0 V
100
A
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
200
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
3.5
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 1.5 A
1.6
2.0
Forward transfer admittance
Yfs
VDS = 10 V, ID = 1.5 A
1.0
2.0
S
Input capacitance
Ciss
410
Reverse transfer capacitance
Crss
40
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
145
pF
Rise time
tr
20
Turn-on time
ton
45
Fall time
tf
15
Switching time
Turn-off time
toff
85
ns
Total gate charge
(Gate source plus gate-drain)
Qg
10
Gate-source charge
Qgs
6
Gate-drain (“Miller”) charge
Qgd
VDD 160 V, VGS = 10 V,
ID = 2.5 A
4
nC
Source-Drain Ratings and Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
2.5
A
Pulse drain reverse current
(Note 1)
IDRP
10
A
Forward voltage (diode)
VDSF
IDR = 2.5 A, VGS = 0 V
2.0
V
Reverse recovery time
trr
135
ns
Reverse recovery charge
Qrr
IDR = 2.5 A, VGS = 0 V,
dIDR/dt = 100 A/s
0.81
C
Marking
Type
J567
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
Duty <= 1%, tw = 10 s
10 V
0 V
VGS
RL = 66.7
VDD 100 V
ID = 1.5 A VOUT
50
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| 2SJ574_11 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET High Speed Switching |
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