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參數(shù)資料
| 型號(hào)： | 2SJ557A |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SC-96, 3 PIN |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大小： | 169K |
| 代理商： | 2SJ557A |
Data Sheet D19059EJ2V0DS
3
2SJ557A
TYPICAL CHARACTERISTICS (TA = 25
°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
dT
-
P
ercentage
of
Rated
Power
-
%
0
20
40
60
80
100
120
0
20
40
60
80 100 120 140 160
TA - Ambient Temperature -
°C
I
D
-
Drain
Current
-
A
-0.01
-0.1
-1
-10
-100
-0.1
-1
-10
-100
ID(DC)
ID(pulse)
PW
= 1
i
00 μ
s
1
i
m
i
s
1
i
0 m
i
s
1
i
00
m
i
s
5 s
Pow
er
Dis
sip
atio
n L
im
ited
RD
S(o
n)
Lim
ited
(V
GS
=
10
V)
TC = 25
°C
Single Pulse
Mounted on FR-4 board of
2500 mm
2 x 1.6 mm,
copper foil 100%, t
≤ 5 sec
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th
(t
)-
Transient
Thermal
Resis
ta
nc
e-
°C/W
0.1
1
10
100
1000
Mounted on FR-4 board of 2500 mm
2 x 1.6 mm,
copper foil 100%, t
≤ 5 sec
Single Pulse
Without board
PW - Pulse Width - s
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
-
Drain
Cur
rent
-
A
-12
-10
-8
-6
-4
-2
0
-2
-1.5
-1
-0.5
0
Pulsed
VGS =
10 V
4.5 V
4.0 V
VDS - Drain to Source Voltage - V
I
D
-
Drain
Current
-
A
-0.0001
-0.001
-0.01
-0.1
-1
-10
0
-0.5
-1
-1.5
-2
-2.5
-3
-3.5
VDS =
10 V
Pulsed
TA =
25°C
25
°C
75
°C
125
°C
150
°C
VGS - Gate to Source Voltage - V
100
μ
1 m
10 m
100 m
1
10
100
1000
<R>
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