參數(shù)資料
型號: 2SJ555
廠商: Hitachi,Ltd.
英文描述: Silicon P Channel MOS FET High Speed Power Switching
中文描述: 硅P通道MOS FET的高速電源開關(guān)
文件頁數(shù): 5/9頁
文件大小: 54K
代理商: 2SJ555
2SJ555
5
1000
500
200
50
100
20
10
–0.1 –0.3
–3
0
–10
–20
–30
–40
–50
2000
1000
500
0
–20
–40
–60
–80
0
0
–4
–8
–12
–16
–20
–100
80
160
240
320
400
1000
200
500
100
20
50
10
–0.1 –0.3
–1
Drain Current I (A)
–3
–10
–1
–30
200
100
DS
V
GS
V
V = –50 V
–25 V
–10 V
–100
V = –10 V
–25 V
–50 V
5000
–30
–100
r
d(off)
t
tf
d(on)
t
–10
di / dt = 50 A / μs
V = 0, Ta = 25 °C
V = –10 V, V = –30 V
PW = 10 μs, duty =
I = –60 A
10000
20000
50000
Ciss
Coss
Crss
V = 0
f = 1 MHz
Reverse Drain Current I (A)
R
Body–Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
D
D
G
G
Dynamic Input Characteristics
S
Switching Characteristics
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