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參數(shù)資料
| 型號： | 2SJ552L |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅P通道MOS FET的高速電源開關(guān) |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 56K |
| 代理商： | 2SJ552L |
2SJ552(L),2SJ552(S)
3
Main Characteristics
80
60
40
20
0
50
100
150
200
–100
D
–30
–10
–3
–1
–0.3
–0.1
–0.1 –0.3
Drain to Source Voltage V (V)
–1
–3
–10
–50
–40
–30
–20
–10
0
–2
–4
–6
–8
–10
–6 V
–4 V
0
–1
–2
–3
–4
–5
–30
–100
–1000
–300
–10 V
–4.5 V
–3 V
–50
–40
–30
–20
–10
10 μs
1ms
Ta = 25 °C
–3.5 V
25 °C
V = –10 V
Pulse Test
Operation in
this area is
limited by R
DS(on)
100μs
PW=10ms(1sho)
–8 V
–5 V
Tc = –25 °C
C
Case Temperature Tc (°C)
Power vs. Temperature Derating
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
Gate to Source Voltage V (V)
D
D
Typical Transfer Characteristics
Pulse Test
V = –2.5 V
75 °C
Tc=25°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ552S | SCR-30 VRM 0.8 A |
| 2SJ553 | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ553L | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ553S | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ560 | Zener Diode; Zener Voltage Typ, Vz:25V; Vz Test Current, Izt:500mA; Power Dissipation, Pd:50W; Package/Case:DO-5; Mounting Type:Through Hole |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ552L-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 20A 3-Pin(3+Tab) LDPAK(L) Box Bulk |
| 2SJ552S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ552STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ553 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ553(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-262VAR |
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