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參數(shù)資料
| 型號： | 2SJ551STL-E |
| 元件分類： | JFETs |
| 英文描述： | 18 A, 60 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-83, LDPAK-3 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 95K |
| 代理商： | 2SJ551STL-E |
2SJ551(L), 2SJ551(S)
Rev.4.00 Sep 07, 2005 page 4 of 8
0.30
–40
0
40
80
120
160
Case Temperature
Tc (°C)
0
0.10
0.05
0.15
0.20
0.25
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
ID = –20 A
ID = –18 A
Forward
Transfer
Admittance
|y
fs
|
(S)
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
100
30
3
10
0.3
1
0.1
–0.1
–0.3
–1
–3
–30
–10
–100
Tc = –25°C
75°C
VDS = –10 V
Pulse Test
25°C
Reverse Drain Current
IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Body-Drain Diode Reverse
Recovery Time
–0.1 –0.2
–0.5 –1
–2
–5
–20
–10
100
50
20
10
di / dt = 50 A /
s
VGS = 0, Ta = 25°C
0
–10
–20
–30
–40
–50
Capacitance
C
(pF)
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
10000
1000
3000
300
30
100
10
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
0
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
0
–20
–16
–12
–8
–4
–100
–80
–60
–40
–20
Gate
to
Source
Voltage
V
GS
(V)
Dynamic Input Characteristics
16
32
48
64
80
VDS
VGS
1000
200
500
100
20
50
10
–0.2
–0.5 –1
–5
–2
–20
–10
–0.1
tf
tr
td(off)
td(on)
Drain Current
ID (A)
Switching
Time
t
(ns)
Switching Characteristics
VDD = –10 V
–25 V
–50 V
VDD = –50 V
–25 V
–10 V
VGS = –4 V
–5 A, –10 A
–5 A, –10 A, –20 A
VGS = –10 V, VDD = –30 V
PW = 5
s, duty ≤ 1 %
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SJ552 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ552(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-262AA |
| 2SJ552(S) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-263AB |
| 2SJ552L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
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