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參數(shù)資料
| 型號： | 2SJ549L |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LDPAK-3 |
| 文件頁數(shù)： | 11/14頁 |
| 文件大?。?/td> | 78K |
| 代理商： | 2SJ549L |
2SJ549(L),2SJ549(S)
4
Main Characteristics
80
60
40
20
0
50
100
150
200
–10
–8
–6
–4
–2
0
–2
–4
–6
–8
–10
–5 V
–4 V
0
–1–2–3
–4
–5
–10 V
–3.5 V
–3 V
Pulse Test
–10
–8
–6
–4
–2
–2.5 V
–25 °C
25 °C
Tc = 75 °C
DS
V
= –10 V
Pulse Test
V
= –2 V
GS
–0.1 –0.3
–1
–3
–10
–30
–100
–20
–10
–2
–1
–0.2
–0.1
DS
1 ms
Ta = 25 °C
100
s
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Typical Output Characteristics
Gate to Source Voltage
V
(V)
GS
Drain
Current
I
(A)
D
Typical Transfer Characteristics
Drain to Source Voltage
V
(V)
Drain
Current
I
(A)
D
Maximum Safe Operation Area
Operation in
this area is
limited by R DS(on)
10 s
–0.5
–5
–50
PW
=
10
ms
(1
shot)
DC
Operation
(Tc=25
)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ549S-E | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ549S-E | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ549S | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ549STL-E | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ553(S) | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ549L-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ549S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ549STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ55 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 180V V(BR)DSS | 8A I(D) | TO-3 |
| 2SJ550 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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