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參數(shù)資料
| 型號(hào)： | 2SJ547 |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 60 V, 0.36 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220FM, 3 PIN |
| 文件頁(yè)數(shù)： | 8/10頁(yè) |
| 文件大?。?/td> | 49K |
| 代理商： | 2SJ547 |
2SJ547
7
–10
–8
–6
–4
–2
0
–0.4
–0.8
–1.2
–1.6
–2.0
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
VDD
50W
Vin
–15 V
0
I D
VDS
I AP
V(BR)DSS
L
VDD
E
=
L I
2
1
V
– V
AR
AP
DSS
DD
2
V
= 0, 5 V
GS
–10 V
–5 V
Pulse Test
10
8
6
4
2
25
50
75
100
125
150
0
I
= –10 A
V
= –25 V
duty < 0.1 %
Rg > 50
AP
DD
W
Channel Temperature Tch (°C)
Repetitive
Avalanche
Energy
E
(mJ)
AR
Maximum Avalanche Energy vs.
Channel Temperature Derating
Avalanche Test Circuit
Avalanche Waveform
Source to Drain Voltage
V
(V)
SD
Reverse
Drain
Current
I
(A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
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PDF描述 |
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| 2SJ559 | 100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ559-A | 100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ563 | 2 A, 30 V, 0.315 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ567(2-7J1B) | 2.5 A, 200 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ574 | 300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ547-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ548 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ548-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ549 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ549(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-262VAR |
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